What is Gallium Nitride on Silicon?
Gallium Nitride on Silicon (GaN-on-Si) involves growing a thin layer of gallium nitride on a silicon substrate. This process combines the exceptional electrical and thermal properties of GaN with the cost-efficiency and scalability of silicon wafers, making it a key material for advanced semiconductor devices.
How is GaN-on-Si Different from GaN-on-Sapphire?
- Cost: GaN-on-Si is more cost-effective due to silicon's affordability.
- Thermal Conductivity: Silicon offers better heat dissipation compared to sapphire.
- Wafer Size: GaN-on-Si supports larger wafers, increasing production efficiency.
- Mechanical Properties: Silicon is less brittle and easier to handle than sapphire.
Applications of GaN-on-Si in Semiconductor Fabrication
- Power Electronics: High-efficiency power converters, inverters, and chargers.
- RF and Microwave Devices: Used in 5G base stations, satellite communication, and radar systems.
- LED Technology: Enables cost-effective production of high-brightness LEDs.
- Electric Vehicles: Power modules for EV battery management and renewable energy systems.
- Consumer Electronics: Fast chargers and compact power supplies.